High speed, low power, optoelectronic InP-based HBT integrated circuits

Abstract

The next generation of fiber optic communication systems will require circuits operating at 50 GHz clock rates. InP-based Heterojunction Bipolar Transistors (HBTs) are ideally suited for the relatively low integration levels but high speed and low power required in optoelectronic transceivers. We review material, device and circuit issues related to InP HBT and the significant challenge that exists because communication system requirements are approaching the performance limits of high speed technologies.