Improving sensitivity and defying residual stress in MEMS bi-material terahertz sensors with metamaterial structures and self-leveling configuration

Abstract

In this paper we report on techniques to improve sensitivity and reduce the residual stress and its effects on THz MEMS bi-material sensors, using metamaterial structures and self-leveling configurations. Structural metamaterial films made of aluminum and silicon-rich silicon oxide bring the THz absorption close to 100% while making the absorption area relatively flat. Multi-folded bi-material and thermal insulating legs compensate the residual stress of the films, leveling the sensors, making them attractive to be used in THz imaging systems with external optical readout.