R. Joshi, R. Houle, K. Batson, D. Rodko, P. Patel, W. Huott, R. Franch, Y. Chan, D. Plass, S. Wilson, P. Wang
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引用次数: 59
Abstract
A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4 V to 1.5 V and -25degC to 100degC, speed of 6.6+ GHz at IV, 25degC and yield of 90-100%.
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