12GHz measurement of transition duration and breakdown field due to low voltage ESD

K. Kawamata, S. Minegishi, A. Haga, O. Fujiwara
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引用次数: 8

Abstract

Transition duration of voltage and current rise time due to small gap discharge as the low voltage ESD was investigated in time domain. The measurement system was improved on the band width from 6GHz to 12GHz using the coaxial electrode system. Also, the sensing system was changed from the coupled transmission lines to an E-field sensor and a Hfield sensor. The insertion loss of the experimental system was within about -3dB in frequency range below 12GHz. As a consequence of the experiment using the system, voltage and current rise time of transition duration were shown 32 ps or less. The rise times were changed in configuration of electrodes, source polarity and discharging voltage. Besides, breakdown field was examined to corroborate the very fast transition durations of about 32ps. The breakdown field was very high of about 8×107 V/m in low voltage discharging of below 350V.
12GHz低电压ESD引起的过渡时间和击穿场测量
在时域上研究了低电压静电放电时小间隙放电引起的电压过渡时间和电流上升时间。采用同轴电极系统将测量系统的带宽从6GHz提高到12GHz。传感系统由耦合传输线改为e场传感器和Hfield传感器。在12GHz以下的频率范围内,实验系统的插入损耗在-3dB左右。使用该系统的实验结果显示,转换持续时间的电压和电流上升时间为32ps或更小。电极的配置、源极性和放电电压的变化改变了上升时间。此外,对击穿场进行了测试,证实了大约32ps的快速跃迁持续时间。在350V以下的低压放电中,击穿场非常高,约为8×107 V/m。
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