High energy electron degradation of the bonding connections

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898190

P. Laskowski, M. Olszacki, M. Al Bahri, P. Pons, M. Jasiorski

引用次数: 0

Abstract

The influence of the high energy electrons on the wire bonding connections has been investigated. To degrade the devices 6MeV electron source has been employed. The irradiation resulted in both: bonding rupture force and ohmic resistance decrease. Device degradation level was additionally evaluated by means of the electron microscopy inspection.

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键合连接的高能电子降解

研究了高能电子对金属丝键合连接的影响。为了降低器件的性能，采用了6MeV的电子源。辐照降低了粘结断裂力和欧姆电阻。此外，还通过电子显微镜检查来评估器件的降解水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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