Research on response property of 4H-SiC photoconductive switches with the same-side electrode structure

Abstract

A photoconductive switch with 4H-SiC as the substrate material and the same-side electrode structure is developed. The test results show that when using a hundred picosecond laser pulse as the trigger source, the device can achieve an ultra-short electrical pulse response of hundred picoseconds, that is, it can output Gigahertz-level wide-spectrum signal. Through the experimental circuit built, under the condition of certain bias voltage and light pulse width, the pulse width of the electrical signal is tested when the energy of the light pulse changes within the range of 0.3-4.4 mJ. The experimental results show that the stronger the energy of the irradiated light pulse, the wider the pulse width of the response electrical signal of this switch.