Self-aligned quantum-dot growth for single-photon sources

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562566

U. W. Pohl, A. Strittmatter, J. Schulze, D. Quandt, T. Germann, W. Unrau, T. Heindel, O. Hitzemann, D. Bimberg, S. Reitzenstein

引用次数: 1

Abstract

The buried oxide current-aperture in a pin diode-structure is used to create a strain field for the self-aligned nucleation of site-controlled single quantum dots. A single-photon source fabricated applying this approach shows spectrally very narrow emission lines (FWHM ≤ 25 μeV) and spectrally pure single-photon emission with a second-order autocorrelation g(2)(0) = 0.05.

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单光子源的自对准量子点生长

利用引脚二极管结构中埋藏的氧化电流孔为位控单量子点的自对准成核提供了应变场。利用该方法制备的单光子源发射谱线非常窄(FWHM≤25 μeV)，单光子发射谱线很纯，二阶自相关系数g(2)(0) = 0.05。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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