Comparison of methods for measuring the turn-off energy of SiC FETs

Abstract

The paper presents the results of investigations in the area of measurements of the turn-off energy of SiC FETs. The new measurement method, called a thermal method, is based on thermal properties of the tested transistors and it is shown together with the necessary measurement setup. The obtained experimental results are presented and compared with the datasheet and the results obtained using the standard method using oscilloscope and high-bandwidth probes. The investigation results are discussed and the limitations of the considered methods are indicated.