Structural and optical properties of annealed Ga2O3 films on Si(111) substrates

Abstract

Abstract An investigation has been made into the structural and optical properties of gallium oxide Ga2O3 films grown on Si(111) substrates by the metal organic chemical vapour deposition (MOCVD) technique, and annealed in the temperature range 750–1050°C. Post-deposition annealing of amorphous Ga2O3 was found to generate b phase grains. Photoluminescence spectra indicated that the annealed Ga2O3 films had a blue-green emission at 470 nm and an ultraviolet emission at 365 nm.