A monolithic X-band class-E power amplifier

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964379

R. Tayrani

引用次数: 26

Abstract

This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 /spl mu/m /spl times/600 /spl mu/m pHEMT device. The amplifier's measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dB over 9-11 GHz.

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单片x波段e类功率放大器

本文描述了被认为是第一个成功设计和制造的宽带单片高效率e类驱动放大器，该放大器工作在x波段，采用0.3 /spl μ m /spl倍/600 /spl μ m的pHEMT器件。该放大器的实测性能显示，在10.6 GHz时峰值功率增加效率(PAE)为63%，恒定输出功率大于24 dBm，在9-11 GHz时增益为10 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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