Raman spectrum of core-shell silicon nanowires on different substrates

2012 International Conference on Optical MEMS and Nanophotonics Pub Date : 2012-10-04 DOI:10.1109/OMEMS.2012.6318783

M. Khorasaninejad, M. Adachi, J. Walia, K. Karim, S. Saini

引用次数: 0

Abstract

Silicon nanowires were grown on glass and steel substrates and investigated with Raman spectroscopy. It is shown that the Raman shift is mainly due to local heating of the nanowires.

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不同衬底上核壳硅纳米线的拉曼光谱

在玻璃和钢衬底上生长硅纳米线，并用拉曼光谱对其进行了研究。结果表明，拉曼位移主要是由于纳米线的局部加热引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 International Conference on Optical MEMS and Nanophotonics

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