A Simple Method for Analysis of Operation of JLFET THz Radiation Sensors

Abstract

A new approach to an analysis of the operation of a “black box” device generating a DC output signal is presented. The signal is measured using a lock-in in voltage and current modes. A measured small frequency output admittance is used to develop an equivalent circuit of the device. The method allows for conclusions on a sensor internal structure and operation principles. It is illustrated by analysis of the operation of a SOI JLFET THz radiation sensor.