A 1Mb CMOS EPROM with a 13.5µm2cell

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157140

T. Coffman, D. Boyd, D. Dolby, M. Gill, S. Kady, R. Lahiry, Sun Lin, D. McEkroy, A. Mitchell, J. Paterson, J. Schreck, P. Shah, F. Takeda

引用次数: 2

Abstract

A 64K×16b EPROM with an access time of 159ns will be reported. Buried diffusion reduces the number of array contacts to one every 16b. The circuit includes eight test features and requires a program time of 65ns for the complete array.

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一个1Mb的CMOS EPROM, 13.5µm2cell

将报告一个访问时间为159ns的64K×16b EPROM。埋藏扩散将阵列触点的数量减少到每16b一个。该电路包括八个测试功能，需要65ns的程序时间来完成整个阵列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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