Low Noise Design of Dielectric Resonator FET Oscillators

1983 13th European Microwave Conference Pub Date : 1983-09-01 DOI:10.1109/EUMA.1983.333243

M. Camiade, A. Bert, J. Graffeuil, G. Pataut

引用次数: 17

Abstract

Experimental comparison has been made between different ORO circuits with FET's of various origins and size around 11 GHz. Details of the most pertinent conclusions are given together with theoretical explanations of the observed results. A ¿105 dBc/Hz figure has been achieved at 10 KHz off carrier.

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介电谐振腔FET振荡器的低噪声设计

实验比较了11 GHz左右不同来源和尺寸的场效应晶体管的不同ORO电路。最相关的结论的细节，连同对观测结果的理论解释一起给出。在离载波10khz时达到105dbc /Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1983 13th European Microwave Conference

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