A Compact Programmable CMOS Reference With ±40μV Accuracy

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.320834

S. Venkatesh, G. Serrano, C. Twigg, P. Hasler

引用次数: 11

Abstract

A compact programmable CMOS voltage reference that is determined by the charge difference between two floating-gate transistors is introduced in this paper. A prototype circuit has been implemented in a 0.35μm CMOS process; reference voltages ranging from 50mV - 0.6V have been achieved and initial accuracy of ±40muV has been demonstrated as well. Experimental results indicate a temperature sensitivity of approximately 53μV/degC for a nominal reference voltage of 0.4V over a temperature range of -60°C to 140°C

查看原文本刊更多论文

一种精度为±40μV的紧凑型可编程CMOS基准

本文介绍了一种由两个浮栅晶体管之间的电荷差来确定的紧凑的可编程CMOS电压基准。原型电路已在0.35μm CMOS工艺中实现;参考电压范围为50mV - 0.6V，初始精度为±40muV。实验结果表明，在-60°C至140°C的温度范围内，当标称参考电压为0.4V时，温度灵敏度约为53μV/℃

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Custom Integrated Circuits Conference 2006

自引率

0.00%

发文量