Charge transport mechanisms and efficiency spectra of thin-film CdS/CdMgTe heterostructures with different mercury content

Abstract

The electrical and photoelectric properties of thin-film CdS/Cd1-xMgxTe (x = 0-0.07) solar cells are investigated. The measured I-V characteristics of the heterostructures are described in terms of well-known theoretical models. The quantum efficiency spectra are analyzed taking into account the drift and diffusion components, recombination on the front and rear surfaces of the Cd1-xMgxTe absorber layer. Comparison of the calculation results with the experimental data allows to determine the main parameters of the Cd1-xMgxTe layer and diode structure.