A CMOS image sensor with 2.5-e− random noise and 110-ke− full well capacity using column source follower readout circuits

Abstract

A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e⁻ conversion gain, 2.5-e⁻ random noise, 110,000-e⁻ full well capacity and 93-dB dynamic range in one exposure.