A practicable de-embedding network at higher frequency of a packaged GaN device

Abstract

The intrinsic performance of the devices is of great meaning during power amplifiers design. A method to update de-embedding network at higher frequency for packaged power devices is put forward based on physical modeling idea. The de-embedding network at 5.8 GHz of a packaged GaN HEMT is presented and its practicability is verified through error analysis. This method is prospected to be applied to other packaged microwave devices.