Analysis of design-oriented compact model for zigzag semiconducting CNTFETs

Abstract

This paper presents a compact, semiconducting behavior zigzag model of carbon nanotube field effect transistor. The model is based on analytical approximations. We have done the performance analysis of the developed model and the comparisons of the performance parameter like surface potential, drain current, quantum capacitance, average velocity against chirality of zigzag CNTFET model using numerical calculations.