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Effects of processing temperatures on device design rules for Silicon/Silicon Germanium heterojunction bipolar transistors

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194440
R. Bashir, A. Kabir, E. R. Myers, J. DeSantis, C. Bracken, P. Westrom, F. Wang
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加工温度对硅/硅锗异质结双极晶体管器件设计规则的影响
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27th European Solid-State Device Research Conference
27th European Solid-State Device Research Conference
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