New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect

Abstract

In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.