Investigation of Si and SiC-based Three-level Converters for Medium Voltage Applications

2019 IEEE Industry Applications Society Annual Meeting Pub Date : 2019-09-01 DOI:10.1109/IAS.2019.8912338

Satish Belkhode, P. Rao, A. Shukla, S. Doolla

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引用次数: 3

Abstract

The neutral point clamped (NPC) converter and the modular multilevel converter (MMC) are among the most popular multilevel converter topologies for medium and high voltage applications. Conventionally, Silicon (Si) switches are used in these converters, but the usage of evolving Silicon Carbide (SiC) switches can enhance their performance. This paper investigates the impact of SiC switches on the performance of the three-level MMC and NPC converter for the medium voltage (MV) Photovoltaic system. The detailed analysis of loss distribution in the switching devices and the impact of SiC switch on the achievable converter rating is given. The obtained results for conduction and switching losses are compared for both the converters. Finally, from the obtained results, conclusions are made for the selection of devices and the converter for a given rating. The analysis is done by first obtaining the device parameters using the simulation of detailed device models using the circuit simulator and then using them to get the equations for the device losses. These equations are then incorporated into the system level simulations of both of the converters to evaluate losses.

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中压用硅基和硅基三电平变换器的研究

中性点箝位(NPC)变换器和模块化多电平变换器(MMC)是中高压应用中最流行的多电平变换器拓扑结构。传统上，这些转换器中使用硅(Si)开关，但使用不断发展的碳化硅(SiC)开关可以提高其性能。本文研究了SiC开关对中压光伏系统中三电平MMC和NPC变换器性能的影响。详细分析了开关器件的损耗分布以及SiC开关对可实现变换器额定功率的影响。对两种变换器的导通和开关损耗进行了比较。最后，根据所得结果，对给定额定值下器件和变换器的选择作出了结论。首先利用电路模拟器对器件的详细模型进行仿真，得到器件的参数，然后利用这些参数得到器件的损耗方程。然后将这些方程合并到两个变换器的系统级模拟中以评估损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE Industry Applications Society Annual Meeting

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