Electrical performance in time domain of subminiature interconnections on new thin films

R. Salik, P. Ferrari, A. Chosson, G. Angnieux
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引用次数: 0

Abstract

This paper is focused on transmission lines with dimensions comparable to future VLSI interconnections (except for the transmission line width which is equal to 5 /spl mu/m, whereas the width of future interconnections will probably be less than 1 /spl mu/m). The goal is to show on which characteristic the effort must be made. To achieve this, the propagation of fast signals along the transmission lines is studied in the time domain. The effect of the insulator on electrical delay and distortion are pointed out. A Fourier transform is used to give the propagation constant /spl gamma/(/spl omega/)=/spl alpha/(/spl omega/)+j/spl beta/(/spl omega/) of the transmission lines in the frequency domain. Results are compared to those obtained by a full wave frequency domain modeling method (TRM).
新型薄膜上超小型互连的时域电学性能
本文的重点是与未来VLSI互连尺寸相当的传输线(除了传输线宽度等于5 /spl mu/m,而未来互连的宽度可能小于1 /spl mu/m)。目标是表明必须在哪个特征上做出努力。为了实现这一点,在时域上研究了快速信号沿传输线的传播。指出了绝缘子对电延迟和电畸变的影响。用傅里叶变换给出频域传输线的传播常数/spl γ /(/spl ω /)=/spl α /(/spl ω /)+j/spl β /(/spl ω /)结果与全波频域建模方法(TRM)进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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