High quality factor chalcogenide microresonators with low parametric oscillation threshold

2021 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2021-05-01 DOI:10.1364/cleo_at.2021.jw1a.107

Pingyang Zeng, J. Wu, Di Xia, Zelin Yang, Yaodong Sun, Yufei Huang, Jiaxin Zhao, Huanjie Cheng, Bin Zhang, Zhaohui Li

引用次数: 0

Abstract

We demonstrated high-quality-factor (Q) chalcogenide (Ge-Sb-S) microresonators with intrinsic Q of 1.9×106 through an improved fabrication process, which enables a low optical parametric oscillation (OPO) threshold of 3.5 mW.

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具有低参数振荡阈值的高品质因数硫系微谐振器

通过改进的制造工艺，我们展示了高质量因子(Q)硫族化合物(Ge-Sb-S)微谐振器，其固有Q为1.9×106，可实现3.5 mW的低光学参量振荡(OPO)阈值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 Conference on Lasers and Electro-Optics (CLEO)

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