Domenico Nardo, M. Cacciato, G. Belverde, S. Rizzo, G. Scarcella, R. Scollo, Alfio Scuto, G. Sorrentino
{"title":"MOSFETs Selection in Front-end Active Bridge Rectifier","authors":"Domenico Nardo, M. Cacciato, G. Belverde, S. Rizzo, G. Scarcella, R. Scollo, Alfio Scuto, G. Sorrentino","doi":"10.23919/AEIT53387.2021.9626885","DOIUrl":null,"url":null,"abstract":"This paper provides some guidelines for the selection of SuperJunction MOSFETs in active rectification of the input AC voltage. It starts with an evaluation of the gain in terms of power efficiency with respect to the traditional diode rectification bridge. Then, a selection guide of the active device is made, based on the device’s datasheet, to highlight the key parameters for a MOSFET and link these parameters to their impact on the converter. At the end, a critical aspect of the active bridge is analyzed, that is the inrush current phenomenon, and occurs each time the converter is activated. This particular working condition is analyzed both electrically and thermally, to show the capability to handle these phenomena by a SuperJunction MOSFET.","PeriodicalId":138886,"journal":{"name":"2021 AEIT International Annual Conference (AEIT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 AEIT International Annual Conference (AEIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AEIT53387.2021.9626885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper provides some guidelines for the selection of SuperJunction MOSFETs in active rectification of the input AC voltage. It starts with an evaluation of the gain in terms of power efficiency with respect to the traditional diode rectification bridge. Then, a selection guide of the active device is made, based on the device’s datasheet, to highlight the key parameters for a MOSFET and link these parameters to their impact on the converter. At the end, a critical aspect of the active bridge is analyzed, that is the inrush current phenomenon, and occurs each time the converter is activated. This particular working condition is analyzed both electrically and thermally, to show the capability to handle these phenomena by a SuperJunction MOSFET.