A Novel C-band High Conversion Efficiency Large Power Rectifier

Abstract

A novel simple microwave power rectifier base on FET (MGF1801) is developed at 5.8 GHz. FETs have the advantages of higher input power, higher DC output voltage, better availability over conventional Schottky barrier diodes. For the input circuit of the rectifier, a novel low pass filter based on defected ground structure (DGS) is implemented which blocks the harmonics produced from FET. For the output circuit of the rectifier, an output filter based on Class-F load structure has be designed to make the harmonics reflect back to the GaAs FET (MGF1801) transistor and eventually converted to DC power. In order to achieve fast and accurate simulation, the paper proposes a design method using Mentor Graphics IE3D electromagnetic simulation software and Agilent Advanced Design System (ADS) circuit simulation software co-simulation. The MW-to-DC conversion efficiency of the proposed rectifier achieves 71.5% with inputted power of 23dBm with a small size. This rectifier is extremely valuable in the high conversion efficiency rectenna when the received power is large.