A broad-band BiCMOS transmitter front-end for 27–36GHz phased array systems

Y. Pei, Ying Chen, D. Leenaerts
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引用次数: 5

Abstract

A 27-36 GHz wide-band phased array TX front-end is demonstrated in a 0.25um SiGe:C BiCMOS process. The TX front-end presents a saturation power more than 12.5dBm across 9GHz bandwidth. The front-end provides variable phase shift from 0°~360° with ~10° resolution, and the relative phase shift remains constant in the desired band. A 2-bit amplitude resolution is available for advanced beamforming algorithms. The wide-band PA can be applied in saturation mode and in linear mode due to its high linearity with an OIP3 over 21dBm.
用于27-36GHz相控阵系统的宽带BiCMOS发射机前端
在0.25um SiGe:C BiCMOS工艺中演示了27- 36ghz宽带相控阵TX前端。TX前端在9GHz带宽上的饱和功率超过12.5dBm。前端提供0°~360°的可变相移,分辨率为~10°,相对相移在所需频带内保持恒定。2位振幅分辨率可用于先进的波束形成算法。由于其高线性度,OIP3超过21dBm,因此宽带PA可以应用于饱和模式和线性模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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