Design and characterization of radiation tolerant CMOS image sensor for space applications

Abstract

In this paper, we address the issues of designing a CMOS image sensor for space applications. The performance of a 4T pinned photodiode pixel under irradiation is shown and an example of a CMOS image sensor designed for sun tracking is given. It has been shown that the radiation tolerance level of the pixel is improved by using more advanced pixel architecture and more advanced fabrication process. Special measures are required in the sensor design to increases the sensor immunity on single event upset and latch-up.