A 1 W 830 MHz monolithic BiCMOS power amplifier

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488510

S. Wong, H. Bhimnathwala, S. Luo, B. Halali, S. Navid

引用次数: 21

Abstract

A silicon MMIC power amplifier delivers over 1 W of output power at 830 MHz. When biased in class AB, this amplifier provides a 30 dB power gain, a 30% power-add-efficiency (PAE), and 50 dB dynamic gain-control range. This amplifier uses on-chip spiral inductors to provide interstage impedance matching, and incorporates negative impedance cancellation in one stage to boost gain and impedance level. Temperature-compensated biasing provides accurate control of the quiescent current in each amplifier stage.

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一个1w 830mhz单片BiCMOS功率放大器

硅MMIC功率放大器在830mhz时提供超过1w的输出功率。当偏置在AB类时，该放大器提供30db功率增益，30%功率附加效率(PAE)和50db动态增益控制范围。该放大器使用片上螺旋电感器提供级间阻抗匹配，并在一级中集成负阻抗消除以提高增益和阻抗水平。温度补偿偏置提供了每个放大器级的静态电流的精确控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

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