The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

7th International Symposium on High-capacity Optical Networks and Enabling Technologies Pub Date : 2010-12-01 DOI:10.1109/HONET.2010.5715755

Zahed M. Khan, Tien K. Ng, U. Schwingenschlogl, B. Ooi

引用次数: 0

Abstract

We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantum-dash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1–1.5 and ∼0.6×10⁻¹⁵ −1.0×10⁻¹⁵ cm², respectively.

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量子冲刺高度对InAs/InP量子冲刺激光器差分增益和线宽增强因子的影响

提出了一种用于分析InAs/InP量子冲刺半导体激光器静态和动态特性的速率方程模型。应用该模型计算了Qdash激光器的差分模态增益(DMG)和线宽增强因子(LEF)。此外，还评估了不同Qdash高度对这些动态参数的影响。该模型预测，随着Qdash高度的增加，模态差分增益降低，而LEF值一般不受影响。Qdash激光器在峰值增益时的LEF和DMG分别达到了~ 1-1.5和~ 0.6×10−15−1.0×10−15 cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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7th International Symposium on High-capacity Optical Networks and Enabling Technologies

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