Temperature Compensation Circuit for ISFET based pH Sensor

Neelu Tiwari, Pankaj Gupta
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引用次数: 2

Abstract

The ion sensitive field effect transistor (ISFET) are being utilized in pH sensor technology to sense pH values. However, it is highly sensitive to temperature and may introduce variations in the output resulting into errors in the reading. This paper proposes a readout integrated circuit (ROIC) for temperature compensation of an ISFET based pH sensor. The resistor present in the bridge works as a thermistor and helps in stabilizing the output. The test circuit is simulated using LTSpice. The analysis is done for a temperature range of 0 − 50°C and pH range of 5.5 to 14 respectively. The performance analysis has been presented with four different type of sensing films i.e. SiO2, Al2O3, Ta2O3 and Si3N4. The proposed circuit gave optimum results, wherein a constant output voltage is achieved throughout the temperature range 0 − 50°C with sensitivity less than 56.33mV/pH. The proposed circuit has been briefly compared with the existing circuits.
基于ISFET的pH传感器温度补偿电路
离子敏感场效应晶体管(ISFET)正被应用于pH传感器技术中来检测pH值。然而,它对温度高度敏感,可能会引入输出变化,导致读数误差。本文提出了一种用于ISFET pH传感器温度补偿的读出集成电路(ROIC)。电桥中的电阻作为热敏电阻工作,有助于稳定输出。使用LTSpice对测试电路进行了仿真。分析分别在0 - 50°C的温度范围和5.5至14的pH范围内完成。对SiO2、Al2O3、Ta2O3和Si3N4四种不同类型的传感膜进行了性能分析。所提出的电路给出了最佳结果,其中在整个温度范围0 - 50°C内实现恒定输出电压,灵敏度小于56.33mV/pH。提出的电路与现有的电路进行了简要的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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