Anomalies observed in wafer level microwave testing

T. Miers, A. Cangellaris, Dylan F. Williams, R. Marks
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引用次数: 4

Abstract

Two anomalies have been observed in the course of developing planar wafer level standards for the testing of GaAs monolithic microwave integrated circuits. The first involves a low-frequency characteristic impedance change of microstrip and coplanar waveguide transmission lines. This effect, which is due to conductor loss of the transmission media, can result in improper/inaccurate calibrations and measurements. The second anomaly results from resonant coupling of the microwave probe into adjacent structures on the wafer. This can occur during calibration or measurement and results in extreme inaccuracies at the resonant frequencies. Methods to eliminate these anomalies are addressed.<>
在晶圆级微波测试中观察到的异常
在GaAs单片微波集成电路的平面晶圆级测试标准的制定过程中,发现了两个异常现象。第一个涉及到微带和共面波导传输线的低频特性阻抗变化。这种效应是由于传输介质的导体损耗造成的,可能导致不正确/不准确的校准和测量。第二个异常是由于微波探针与晶圆片上相邻结构的共振耦合造成的。这可能发生在校准或测量期间,并导致谐振频率的极端不准确。讨论了消除这些异常的方法。
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